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savantic semiconductor product specification silicon npn power transistors 2SC3280 d escription with to-3pl package complement to type 2sa1301 applications power amplifier applications recommended for 80w high fidelity audio frequency amplifier output stage pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 160 v v ceo collector-emitter voltage open base 160 v v ebo emitter-base voltage open collector 5 v i c collector current 12 a i b base current 1.2 a p c collector power dissipation t c =25 120 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (to-3pl) and symbol
savantic semiconductor product specification 2 silicon npn power transistors 2SC3280 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =50ma ;i b =0 160 v v cesat collector-emitter saturation voltage i c =8a i b =0.8a 2.5 v v be base-emitter voltage i c =6a ; v ce =5v 1.5 v i cbo collector cut-off current v cb =160v i e =0 5 a i ebo emitter cut-off current v eb =5v; i c =0 5 a h fe-1 dc current gain i c =1a ; v ce =5v 55 160 h fe-2 dc current gain i c =6a ; v ce =5v 35 f t transition frequency i c =1a ; v ce =5v 30 mhz c ob collector output capacitance f=1mhz;v cb =10v 220 pf h fe-1 classifications r o 55-110 80-160
savantic semiconductor product specification 3 silicon npn power transistors 2SC3280 package outline fig.2 outline dimensions (unindicated tolerance:0.50 mm)
savantic semiconductor product specification 4 silicon npn power transistors 2SC3280

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